MBE-830S Molecular Beam Epitaxy System (ANELVA corp.)
نویسندگان
چکیده
منابع مشابه
Basics of Molecular Beam Epitaxy (MBE)
A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...
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The vapor—liquid—solid growth of Si whiskers from disilane has been studied in a gas source MBE system. The wire-like Si crystals are grown on Si(1 1 1) substrates in a temperature range of 600—800°C, a disilane pressure between 1]10~4 and 1]10~7 Torr, and using Au as a growth-promoting agent. The morphology of the Si whiskers is investigated. It is found that the growth rate of the vertical wi...
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Same as Report (SAR) 18. NUMBER
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1982
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.3.125